Compact Physics Hot-copyright Degradation Model Valid over a Wide Bias Range

Compact Physics Hot-copyright Degradation Model Valid over a Wide Bias Range

Blog Article

We develop a compact physics model for hot-copyright degradation (HCD) that is valid over a wide range of gate and drain voltages (Vgs and Vds, respectively).Special attention is paid to the contribution of secondary carriers Crochet Hooks (generated by impact ionization) to HCD, which was shown to be significant under stress conditions with low Vgs Wheel Transport Kit and relatively high Vds.Implementation of this contribution is based on refined modeling of copyright transport for both primary and secondary carriers.To validate the model, we employ foundry-quality n-channel transistors and a broad range of stress voltages {Vgs,Vds}.